MBR60080CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 80V 300A 2TOWER
$129.36
Available to order
Reference Price (USD)
25+
$96.34800
Exquisite packaging
Discount
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Introducing GeneSiC Semiconductor's MBR60080CT, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust GeneSiC Semiconductor's decades of semiconductor expertise embedded in every MBR60080CT for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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