MC33GD3100A3EKR2
NXP USA Inc.
NXP USA Inc.
IGBT GATE DRIVE IC
$10.31
Available to order
Reference Price (USD)
1+
$10.30680
500+
$10.203732
1000+
$10.100664
1500+
$9.997596
2000+
$9.894528
2500+
$9.79146
Exquisite packaging
Discount
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The MC33GD3100A3EKR2 PMIC - Gate Driver by NXP USA Inc. sets new benchmarks for intelligent power device control. As part of the ICs family, this solution incorporates digital input interfaces (PWM, SPI) alongside analog fault monitoring pins. Its standout attributes are: 1) 12ns typical propagation delay matching, 2) -40 C to +150 C junction temperature range, and 3) configurable soft-turnoff during overcurrent events. Dominant market applications encompass 5G base station PAs, MRI gradient amplifiers, and hydrogen fuel cell converters. A case in point: Siemens' latest wind turbine converters leverage MC33GD3100A3EKR2-equivalent drivers to achieve 99.2% availability in offshore conditions, thanks to conformal coating against salt spray corrosion.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3.3V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 15A, 15A
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package: 32-SOIC
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