MCZ33285EFR2
NXP USA Inc.
NXP USA Inc.
IC GATE DRVR HIGH-SIDE 8SOIC
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NXP USA Inc.'s MCZ33285EFR2 represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the MCZ33285EFR2 driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Obsolete
- Driven Configuration: High-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7V ~ 40V
- Logic Voltage - VIL, VIH: 0.7V, 1.7V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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