MJ10006
Solid State Inc.
Solid State Inc.
TRANS NPN DARL 350V 10A TO3
$3.93
Available to order
Reference Price (USD)
1+
$3.93300
500+
$3.89367
1000+
$3.85434
1500+
$3.81501
2000+
$3.77568
2500+
$3.73635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the MJ10006 Bipolar Junction Transistor (BJT) from Solid State Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the MJ10006 delivers superior performance in diverse environments. Solid State Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 2.9V @ 1A, 10A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2.5A, 5V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
Related Products
Renesas Electronics America Inc
2SA1441(016)-S6-AZ
NXP USA Inc.
PDTD114EQA147
Diodes Incorporated
DSS4320T-7
onsemi
BC817-40LT1
onsemi
2SB1203S-E
Nexperia USA Inc.
2PD601ARL,215
Renesas Electronics America Inc
2SC5820WU-TL-H
onsemi
BD13916STU
Diodes Incorporated
FCX1149ATA
Nexperia USA Inc.