MJ10012
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 400V 10A TO3
$7.92
Available to order
Reference Price (USD)
1+
$7.92000
500+
$7.8408
1000+
$7.7616
1500+
$7.6824
2000+
$7.6032
2500+
$7.524
Exquisite packaging
Discount
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Discover the MJ10012 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the MJ10012 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 3A, 6V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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