MJD112T4
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 100V 2A DPAK
$0.91
Available to order
Reference Price (USD)
2,500+
$0.28806
5,000+
$0.26819
12,500+
$0.26488
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the MJD112T4 Bipolar Junction Transistor (BJT) by STMicroelectronics. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the MJD112T4 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust STMicroelectronics for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 20 W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
onsemi
15C01M-TL-E
onsemi
BC859BLT3G
Microchip Technology
JANSH2N2221AUB/TR
Yangzhou Yangjie Electronic Technology Co.,Ltd
BC857B-F2-0000HF
onsemi
KSD363RTU
Infineon Technologies
BCX6916E6327
Nexperia USA Inc.
BC806-25WX
Diodes Incorporated
ZXTN19060CGTA
onsemi
NSCT817-40LT3G
Nexperia USA Inc.