MJD122-1
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 100V 8A TO251
$1.02
Available to order
Reference Price (USD)
1+
$1.00000
10+
$0.87800
100+
$0.68320
500+
$0.54960
1,000+
$0.44880
2,500+
$0.41100
5,000+
$0.38580
Exquisite packaging
Discount
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Discover the MJD122-1 Bipolar Junction Transistor (BJT) from STMicroelectronics, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the MJD122-1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose STMicroelectronics for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 20 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TO-251 (IPAK)
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