MJD47T4G
onsemi
onsemi
TRANS NPN 250V 1A DPAK
$0.72
Available to order
Reference Price (USD)
1+
$0.72000
500+
$0.7128
1000+
$0.7056
1500+
$0.6984
2000+
$0.6912
2500+
$0.684
Exquisite packaging
Discount
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Optimize your electronic systems with the MJD47T4G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the MJD47T4G delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
- Power - Max: 1.56 W
- Frequency - Transition: 10MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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