MJE5850G
onsemi
onsemi
TRANS PNP 300V 8A TO220
$3.68
Available to order
Reference Price (USD)
1+
$2.86000
50+
$2.42480
100+
$2.06590
500+
$1.69730
1,000+
$1.40633
Exquisite packaging
Discount
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Enhance your circuit designs with the MJE5850G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MJE5850G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Last Time Buy
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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