MMBFJ175LT1G
onsemi
onsemi
JFET P-CH 30V 0.225W SOT23-3
$0.40
Available to order
Reference Price (USD)
3,000+
$0.14859
6,000+
$0.14001
15,000+
$0.13143
30,000+
$0.12113
75,000+
$0.11684
Exquisite packaging
Discount
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The MMBFJ175LT1G from onsemi is a high-performance Junction Field-Effect Transistor (JFET) designed for precision analog applications. As part of our Discrete Semiconductor Products collection, this JFET offers exceptional input impedance and low noise characteristics. These transistors feature controlled pinch-off voltage and stable operation across wide temperature ranges, making them ideal for demanding electronic circuits. Commonly used in audio amplifiers, instrumentation systems, and sensor interfaces, the MMBFJ175LT1G provides reliable performance in RF stages, mixer circuits, and low-noise preamplifiers. Engineers particularly value this series for its consistent parameters and durability in industrial environments.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
- Resistance - RDS(On): 125 Ohms
- Power - Max: 225 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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