MMBFJ202
onsemi
onsemi
JFET N-CH 40V 350MW SOT23-3
$0.38
Available to order
Reference Price (USD)
3,000+
$0.11678
6,000+
$0.11003
15,000+
$0.10329
30,000+
$0.09520
75,000+
$0.09183
Exquisite packaging
Discount
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The MMBFJ202 from onsemi represents the next generation of JFET technology in Discrete Semiconductor Products. This N-channel/P-channel JFET delivers exceptional IDSS matching and transconductance linearity for precision analog designs. Key advantages include ultra-low 1/f noise, wide dynamic range, and stable operation from -55 C to +150 C. The MMBFJ202 is widely adopted in scientific instrumentation, including particle detectors, mass spectrometers, and telescope sensor arrays. Commercial applications span from boutique guitar effects pedals to industrial process control systems. Engineers trust this JFET for its repeatable parameters batch-to-batch and exceptional longevity in continuous operation scenarios.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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