MMBT2222A_R1_00001
Panjit International Inc.
Panjit International Inc.
TRANS NPN 40V 0.6A SOT23
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the MMBT2222A_R1_00001 Bipolar Junction Transistor (BJT) by Panjit International Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MMBT2222A_R1_00001 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Panjit International Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 225 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
Related Products
Central Semiconductor Corp
2N3711 PBFREE
Central Semiconductor Corp
2N4398 PBFREE
Microchip Technology
JANKCA2N5238
Diodes Incorporated
FCX718TA
Diodes Incorporated
DSS5160T-7
Sanyo
2SA1786E-AN
NXP USA Inc.
2PC4617R,135
Sanken
2SB1259
onsemi
2SA2124-S-TD-E
Diodes Incorporated