MMBT3904LP-7B
Diodes Incorporated
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
$0.39
Available to order
Reference Price (USD)
10,000+
$0.10335
30,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMBT3904LP-7B Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MMBT3904LP-7B is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UFDFN
- Supplier Device Package: X1-DFN1006-3
Related Products
Toshiba Semiconductor and Storage
2SA1182-GR,LF
Rohm Semiconductor
UMT4403U3HZGT106
Fairchild Semiconductor
KSA1015OBU
Diodes Incorporated
BCX41TA
Renesas Electronics America Inc
2SC2619FBTR-E
onsemi
NSVMMBT6429LT1G
Infineon Technologies
BCX42E6327
onsemi
SMMBT6427LT1G
Microchip Technology
2N6230
Microchip Technology