MMBT3906FZ-7B
Diodes Incorporated
Diodes Incorporated
TRANS PNP 40V 0.2A 3DFN
$0.14
Available to order
Reference Price (USD)
10,000+
$0.15043
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMBT3906FZ-7B Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the MMBT3906FZ-7B provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 435 mW
- Frequency - Transition: 280MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: X2-DFN0606-3
Related Products
onsemi
MJE15031G
Taiwan Semiconductor Corporation
BC850CW RFG
onsemi
MMBTA13LT1G
onsemi
KSC2223YMTF
Infineon Technologies
MMBTA14LT1HTSA1
Nexperia USA Inc.
BCP53-16,115
Nexperia USA Inc.
PBSS4350Z,135
Diodes Incorporated
ZTX689B
Diodes Incorporated
ZTX618
Diodes Incorporated