MMDT3904Q-7-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT36
$0.07
Available to order
Reference Price (USD)
3,000+
$0.07217
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMDT3904Q-7-F BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The MMDT3904Q-7-F undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Nexperia USA Inc.
BCV64B,215
Solid State Inc.
2N2914
Panjit International Inc.
BC817DS-25_R1_00001
Rohm Semiconductor
EMX52T2R
Texas Instruments
SN75468N
onsemi
FMB3946
onsemi
NSV40301MDR2G
onsemi
BC857BDW1T1G
NTE Electronics, Inc
NTE2018
onsemi