MMDT4146-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 25V 0.2A SOT363
$0.44
Available to order
Reference Price (USD)
30,000+
$0.14000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMDT4146-7 BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The MMDT4146-7 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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