MMIX1X200N60B3H1
IXYS
IXYS
IGBT 600V 175A 520W SMPD
$45.79
Available to order
Reference Price (USD)
1+
$38.07000
20+
$35.21750
40+
$32.36200
100+
$30.07770
260+
$27.60292
Exquisite packaging
Discount
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Upgrade your power management systems with the MMIX1X200N60B3H1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the MMIX1X200N60B3H1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose MMIX1X200N60B3H1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 175 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Power - Max: 520 W
- Switching Energy: 2.85mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 315 nC
- Td (on/off) @ 25°C: 48ns/160ns
- Test Condition: 360V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
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