HGTP3N60A4
Harris Corporation
Harris Corporation
N-CHANNEL IGBT
$1.29
Available to order
Reference Price (USD)
800+
$1.35986
Exquisite packaging
Discount
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The HGTP3N60A4 Single IGBT transistor by Harris Corporation is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the HGTP3N60A4 provides consistent performance in varied conditions. Rely on Harris Corporation's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 17 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
- Power - Max: 70 W
- Switching Energy: 37µJ (on), 25µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 6ns/73ns
- Test Condition: 390V, 3A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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