IXA55I1200HJ
IXYS
IXYS
IGBT 1200V 84A 290W TO247
$16.89
Available to order
Reference Price (USD)
30+
$12.37367
Exquisite packaging
Discount
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Enhance your electronic projects with the IXA55I1200HJ Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXA55I1200HJ ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXA55I1200HJ for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 84 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 290 W
- Switching Energy: 4.5mJ (on), 5.5mJ (off)
- Input Type: Standard
- Gate Charge: 190 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 50A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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