RJH65T46DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 80A TO247A
$4.44
Available to order
Reference Price (USD)
1+
$4.44000
500+
$4.3956
1000+
$4.3512
1500+
$4.3068
2000+
$4.2624
2500+
$4.218
Exquisite packaging
Discount
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Enhance your electronic projects with the RJH65T46DPQ-A0#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJH65T46DPQ-A0#T0 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJH65T46DPQ-A0#T0 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 340.9 W
- Switching Energy: 450µJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 138 nC
- Td (on/off) @ 25°C: 45ns/170ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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