AFGY160T65SPD-B4
onsemi
onsemi
IGBT - 650V, 160A FIELD STOP TRE
$13.28
Available to order
Reference Price (USD)
1+
$13.28500
500+
$13.15215
1000+
$13.0193
1500+
$12.88645
2000+
$12.7536
2500+
$12.62075
Exquisite packaging
Discount
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The AFGY160T65SPD-B4 by onsemi is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With onsemi's reputation for quality, the AFGY160T65SPD-B4 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 240 A
- Current - Collector Pulsed (Icm): 480 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
- Power - Max: 882 W
- Switching Energy: 12.4mJ (on), 5.7mJ (off)
- Input Type: Standard
- Gate Charge: 245 nC
- Td (on/off) @ 25°C: 53ns/98ns
- Test Condition: 400V, 160A, 5Ohm, 15V
- Reverse Recovery Time (trr): 132 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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