IHW40N60RFFKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 80A 305W TO247-3
$2.26
Available to order
Reference Price (USD)
1+
$5.15000
10+
$4.66200
240+
$3.87963
Exquisite packaging
Discount
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Upgrade your power management systems with the IHW40N60RFFKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IHW40N60RFFKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IHW40N60RFFKSA1 for your critical power needs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 305 W
- Switching Energy: 560µJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: -/175ns
- Test Condition: 400V, 40A, 5.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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