MMRF1305HR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 133V 512MHZ NI-780-4
$113.94
Available to order
Reference Price (USD)
50+
$74.05820
100+
$68.87940
Exquisite packaging
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The MMRF1305HR5 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The MMRF1305HR5's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the MMRF1305HR5 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 512MHz
- Gain: 26dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 100W
- Voltage - Rated: 133 V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
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