MPS3563G
onsemi
onsemi
RF TRANS NPN 12V 1.5GHZ TO92
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
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The MPS3563G RF Bipolar Junction Transistor (BJT) by onsemi is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the MPS3563G is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose onsemi for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
- Gain: 14dB @ 200MHz
- Power - Max: 350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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