MPSH17G
onsemi
onsemi
RF TRANS NPN 15V 800MHZ TO92-3
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Introducing the MPSH17G, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The MPSH17G features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): 6dB @ 200MHz
- Gain: 24dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92 (TO-226)
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