MQ2N2608UB/TR
Microchip Technology
Microchip Technology
JFET
$131.18
Available to order
Reference Price (USD)
1+
$131.17500
500+
$129.86325
1000+
$128.5515
1500+
$127.23975
2000+
$125.928
2500+
$124.61625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microchip Technology's MQ2N2608UB/TR sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The MQ2N2608UB/TR also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
Related Products
Microchip Technology
2N4860UB/TR
onsemi
TF218THC-5-TL-H
Linear Integrated Systems, Inc.
LSK489 TO-71 6L ROHS
Microchip Technology
2N4860
Microchip Technology
2N5545
Microchip Technology
MQ2N4858
Microchip Technology
MV2N5114UB/TR
Microchip Technology
2N4092
Microchip Technology
2N4416AUBC/TR
Microchip Technology