MRF24G300HS-2STG
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 300W 2400MH
$2,812.50
Available to order
Reference Price (USD)
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$2812.50000
500+
$2784.375
1000+
$2756.25
1500+
$2728.125
2000+
$2700
2500+
$2671.875
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The MRF24G300HS-2STG is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The MRF24G300HS-2STG's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the MRF24G300HS-2STG to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 2.4GHz ~ 2.5GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 336W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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