MRF553T
Microsemi Corporation
Microsemi Corporation
RF TRNS NPN 16V 175MHZ PWR MACRO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the MRF553T, a high-efficiency Bipolar Junction Transistor (BJT) from Microsemi Corporation. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The MRF553T offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Microsemi Corporation for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 11.5dB
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Power Macro
- Supplier Device Package: Power Macro
Related Products
CEL
NE68139-T1
Microsemi Corporation
JAN2N4957
Broadcom Limited
AT-41532-TR2G
CEL
NE68119-T1
Infineon Technologies
BFP520E6327BTSA1
Broadcom Limited
AT-30533-TR1G
Diodes Incorporated
FMMT918TA
onsemi
MPSH17G
NXP USA Inc.
BFG35,115
onsemi