MRFE6S9060GNR1
NXP USA Inc.
NXP USA Inc.
FET RF N-CH 1000MHZ TO270-2GN
$47.35
Available to order
Reference Price (USD)
1+
$47.34740
500+
$46.873926
1000+
$46.400452
1500+
$45.926978
2000+
$45.453504
2500+
$44.98003
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the MRFE6S9060GNR1 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRFE6S9060GNR1's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRFE6S9060GNR1 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 21.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 450 mA
- Power - Output: 14W
- Voltage - Rated: 66 V
- Package / Case: TO-270BB
- Supplier Device Package: TO-270 WB-4 Gull
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