MRFE6VP61K25GNR6
NXP USA Inc.
NXP USA Inc.
TRANS RF LDMOS 1250W 50V
$358.48
Available to order
Reference Price (USD)
150+
$137.59953
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRFE6VP61K25GNR6 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRFE6VP61K25GNR6's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRFE6VP61K25GNR6 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 23dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 1250W
- Voltage - Rated: 133 V
- Package / Case: OM-1230G-4L
- Supplier Device Package: OM-1230G-4L
Related Products
NXP USA Inc.
MRF6VP2600HR5
Ampleon USA Inc.
BLS9G2735LS-50U
NXP USA Inc.
MRFE6VP6300GSR5
NXP USA Inc.
MRFE6S9045NR1
NXP USA Inc.
BLF7G24LS-140,118
Wolfspeed, Inc.
GTVA355001EC-V1-R0
Ampleon USA Inc.
BLF645,112
NXP USA Inc.
A2V09H400-04NR3
Ampleon USA Inc.
BLF898U
Ampleon USA Inc.