MSCSM170AM058CD3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-D3
$1,162.25
Available to order
Reference Price (USD)
1+
$1162.25000
500+
$1150.6275
1000+
$1139.005
1500+
$1127.3825
2000+
$1115.76
2500+
$1104.1375
Exquisite packaging
Discount
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The MSCSM170AM058CD3AG from Microchip Technology is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the MSCSM170AM058CD3AG provides reliable performance in demanding environments. Choose Microchip Technology for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
- Power - Max: 1.642kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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