MSCSM170AM45CT1AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP1F
$155.95
Available to order
Reference Price (USD)
1+
$155.95000
500+
$154.3905
1000+
$152.831
1500+
$151.2715
2000+
$149.712
2500+
$148.1525
Exquisite packaging
Discount
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The MSCSM170AM45CT1AG from Microchip Technology is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the MSCSM170AM45CT1AG provides reliable performance in demanding environments. Choose Microchip Technology for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
- Power - Max: 319W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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