MUN5230DW1T1
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SOT363
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MUN5230DW1T1 from onsemi is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the MUN5230DW1T1 ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, onsemi's MUN5230DW1T1 delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Rohm Semiconductor
EMD9FHAT2R
Infineon Technologies
BCR22PNE6327BTSA1
Panasonic Electronic Components
DMG964010R
Nexperia USA Inc.
PUMH2/DG/B3,115
onsemi
MUN5335DW1T1
Panasonic Electronic Components
XP0428600L
Toshiba Semiconductor and Storage
RN1911(T5L,F,T)
Panasonic Electronic Components
DMC964050R
onsemi
EMD5DXV6T1
Panasonic Electronic Components