MX0912B351Y
Ampleon USA Inc.
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
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Discover the MX0912B351Y, a cutting-edge RF Bipolar Junction Transistor (BJT) from Ampleon USA Inc., part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The MX0912B351Y features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Ampleon USA Inc. for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 960W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 21A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
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