MZ0912B50Y
Ampleon USA Inc.
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
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The MZ0912B50Y RF Bipolar Junction Transistor (BJT) by Ampleon USA Inc. is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust Ampleon USA Inc. for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 3A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: SOT443A
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