NCV51513ABMNTWG
onsemi
onsemi
130V, 2.5/3.0A HIGH AND LOW SIDE
$1.70
Available to order
Reference Price (USD)
1+
$1.70000
500+
$1.683
1000+
$1.666
1500+
$1.649
2000+
$1.632
2500+
$1.615
Exquisite packaging
Discount
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onsemi presents the NCV51513ABMNTWG as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 19V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 2A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 150 V
- Rise / Fall Time (Typ): 9ns, 7ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFNW (3x3)
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