NCV5705BDR2G
onsemi
onsemi
IGBT GATE DRIVERS, HIGH-CURRENT,
$0.78
Available to order
Reference Price (USD)
1+
$0.78300
500+
$0.77517
1000+
$0.76734
1500+
$0.75951
2000+
$0.75168
2500+
$0.74385
Exquisite packaging
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Optimize your power systems with onsemi's NCV5705BDR2G, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The NCV5705BDR2G demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 20V (Max)
- Logic Voltage - VIL, VIH: 0.5V, 4.5V
- Current - Peak Output (Source, Sink): 4A, 6A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9.2ns, 7.9ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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