Shopping cart

Subtotal: $0.00

NDD60N360U1-1G

onsemi
NDD60N360U1-1G Preview
onsemi
MOSFET N-CH 600V 11A IPAK
$1.08
Available to order
Reference Price (USD)
1+
$1.08000
500+
$1.0692
1000+
$1.0584
1500+
$1.0476
2000+
$1.0368
2500+
$1.026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Related Products

Vishay Siliconix

SUD23N06-31L-T4-E3

Alpha & Omega Semiconductor Inc.

AON7528

Vishay Siliconix

SI9435BDY-T1-GE3

Alpha & Omega Semiconductor Inc.

AOW7S60

Fairchild Semiconductor

FQPF9N25CYDTU

Toshiba Semiconductor and Storage

TK8A45DA(STA4,Q,M)

Diodes Incorporated

DMN3731UFB4-7B

Micro Commercial Co

MCAC25P10YHE3-TP

Top