NE3503M04-T2B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.76
Available to order
Reference Price (USD)
1+
$0.76000
500+
$0.7524
1000+
$0.7448
1500+
$0.7372
2000+
$0.7296
2500+
$0.722
Exquisite packaging
Discount
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Meet the NE3503M04-T2B-A, a state-of-the-art RF MOSFET transistor from Renesas Electronics America Inc, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The NE3503M04-T2B-A combines cutting-edge semiconductor technology with Renesas Electronics America Inc's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the NE3503M04-T2B-A into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 12dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.45dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: M04
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