NE3515S02-T1C-A
Renesas
Renesas
SUPER LOW NOISE PSEUDOMORPHIC HJ
$2.80
Available to order
Reference Price (USD)
1+
$2.80000
500+
$2.772
1000+
$2.744
1500+
$2.716
2000+
$2.688
2500+
$2.66
Exquisite packaging
Discount
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Engineered for excellence, the NE3515S02-T1C-A RF MOSFET from Renesas is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The NE3515S02-T1C-A's robust construction ensures long-term reliability even in harsh environments. Choose Renesas's NE3515S02-T1C-A for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Last Time Buy
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 12.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 88mA
- Noise Figure: 0.3dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-Micro-X
- Supplier Device Package: 4-Micro-X
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