NE3517S03-T1D-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$1.26
Available to order
Reference Price (USD)
1+
$1.26000
500+
$1.2474
1000+
$1.2348
1500+
$1.2222
2000+
$1.2096
2500+
$1.197
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the NE3517S03-T1D-A RF MOSFET from Renesas Electronics America Inc (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The NE3517S03-T1D-A's advanced design ensures maximum power transfer with minimal distortion. With Renesas Electronics America Inc's expertise in semiconductor innovation, the NE3517S03-T1D-A provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.7dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S03
Related Products
Wolfspeed, Inc.
CGHV27060MP
Freescale Semiconductor
MRF8P20165WHSR5
Intersil
HIP5010IS
STMicroelectronics
SD4933
Ampleon USA Inc.
BLL6H1214L-250,112
NXP USA Inc.
BF1201WR,115
Ampleon USA Inc.
BLA8H0910L-500U
Wolfspeed, Inc.
CGHV40320D-GP4
STMicroelectronics
PD57060S-E
Ampleon USA Inc.