NE3521M04-T2-A
Renesas Electronics America Inc

Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.20
Available to order
Reference Price (USD)
1+
$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
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The NE3521M04-T2-A from Renesas Electronics America Inc is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the NE3521M04-T2-A is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Renesas Electronics America Inc's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel GaAs HJ-FET
- Frequency: 20GHz
- Gain: 11dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.85dB
- Current - Test: 6 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: -