NE66219-T1-A
Renesas
Renesas
RF TRANS NPN 3.3V 21GHZ SOT523
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
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Discover the NE66219-T1-A, a premium RF Bipolar Junction Transistor (BJT) by Renesas, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The NE66219-T1-A boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Renesas for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 14dB
- Power - Max: 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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