NESG270034-T1-AZ
Renesas
Renesas
NPN SILICON MEDIUM POWER TRANSIS
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
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The NESG270034-T1-AZ by Renesas is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Renesas for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9.2V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 19.5dB
- Power - Max: 1.9W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
- Current - Collector (Ic) (Max): 750mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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