2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ USM
$0.42
Available to order
Reference Price (USD)
3,000+
$0.11781
6,000+
$0.11067
15,000+
$0.10353
30,000+
$0.09520
Exquisite packaging
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The 2SC5065-Y(TE85L,F) RF Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 2SC5065-Y(TE85L,F) is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Toshiba Semiconductor and Storage for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 12dB ~ 17dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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