NGTB20N120IHRWG
onsemi
onsemi
IGBT TRENCH/FS 1200V 40A TO247
$5.82
Available to order
Reference Price (USD)
1+
$4.73000
30+
$4.01633
120+
$3.48075
510+
$2.96310
1,020+
$2.49900
Exquisite packaging
Discount
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The NGTB20N120IHRWG from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose NGTB20N120IHRWG for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
- Power - Max: 384 W
- Switching Energy: 450µJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: -/235ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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