NP29N06QUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / MOSFET
$1.95
Available to order
Reference Price (USD)
1+
$1.95000
500+
$1.9305
1000+
$1.911
1500+
$1.8915
2000+
$1.872
2500+
$1.8525
Exquisite packaging
Discount
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Enhance your circuit designs with the NP29N06QUK-E1-AY, a premium Transistors - FETs, MOSFETs - Arrays product from Renesas Electronics America Inc. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the NP29N06QUK-E1-AY delivers consistent and reliable operation. Renesas Electronics America Inc's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
- Power - Max: 1W (Ta), 44W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-HSON (5x5.4)
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Renesas Electronics America Inc
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Renesas Electronics America Inc