RJK0222DNS-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$1.06
Available to order
Reference Price (USD)
1+
$1.06000
500+
$1.0494
1000+
$1.0388
1500+
$1.0282
2000+
$1.0176
2500+
$1.007
Exquisite packaging
Discount
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Enhance your circuit designs with the RJK0222DNS-00#J5, a premium Transistors - FETs, MOSFETs - Arrays product from Renesas Electronics America Inc. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the RJK0222DNS-00#J5 delivers consistent and reliable operation. Renesas Electronics America Inc's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 14A, 16A
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
- Power - Max: 8W, 10W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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