NP82N04MLG-S18-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 82A TO220-3
$2.16
Available to order
Reference Price (USD)
1+
$2.16000
500+
$2.1384
1000+
$2.1168
1500+
$2.0952
2000+
$2.0736
2500+
$2.052
Exquisite packaging
Discount
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The NP82N04MLG-S18-AY from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NP82N04MLG-S18-AY offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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