NSBA113EDXV6T1G
onsemi
onsemi
TRANS 2PNP PREBIAS 0.25W SOT563
$0.07
Available to order
Reference Price (USD)
4,000+
$0.10395
Exquisite packaging
Discount
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The NSBA113EDXV6T1G from onsemi is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the NSBA113EDXV6T1G ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, onsemi's NSBA113EDXV6T1G delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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